In Situ Scanning Tunneling Microscopy of Copper Deposition with Benzotriazole

Abstract

The submicron topography of Cu deposits has been studied with scanning tunneling microscopy to investigate the effect of benzotriazole in the initial stages of deposition. The presence of benzotriazole results in a marked increase in overpotential for the deposition. It is found to eliminate the preferential growth of specific crystallographic planes and the formation of crystal facets. The number density of nuclei, determined from Fourier transforms of the surface profiles of 7 nm thick films, is found to increase with increasing overpotential of the deposition but is independent of the presence of the inhibitor. © 1991, The Electrochemical Society, Inc. All rights reserved.