R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. © 2010 Elsevier B.V.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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