L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. © 2010 Elsevier B.V.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Mark W. Dowley
Solid State Communications
T.N. Morgan
Semiconductor Science and Technology