Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
A method for growing heteroepitaxial Si films on sapphire was developed using a 6 nm thin Al layer at substrate temperature of 600 °C. Subsequently, the growth of Si nanowires was demonstrated on these films at 490 °C without breaking vacuum. We characterized the properties of the Si films by Raman scattering, X-ray diffraction and transmission electron microscopy and show that the crystal quality and dopant control are promising for photovoltaic applications. © 2010 Elsevier B.V.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
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Physical Review B
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Big Data 2022
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