About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
JES
Paper
Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes
Abstract
Time dependent dielectric breakdown of SiO2 films in MOS structures is shown to be strongly dependent on the electrode material used. Polycrystalline silicon electrodes give substantially longer times to failure than do aluminum electrodes. The improvement is 3-4 decades at 300°C; and, because of the larger activation energy for wearout with poly-Si (2.4 eV) compared to Al (1.4 eV), the relative advantage would be 8-16 decades at room temperature. Although time to breakdown is a strong function of SiO2 thickness when the electrode is Al, it is nearly independent of thickness for structures having poly-Si electrodes. © 1975, The Electrochemical Society, Inc. All rights reserved.