IIIB-5 Fabrication of Thin Gate Oxide MOSFET’s Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO2

Paper

01 Jan 1987

IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO₂

No abstract available.

Paper

J. Batey, E. Tierney, et al.

IEEE Electron Device Letters

Paper

J. Batey, E. Tierney

Journal of Applied Physics

Paper

J.W. Stasiak, J. Batey, et al.

IEEE Electron Device Letters

Paper

D.A. Buchanan, J. Batey, et al.

IEEE Electron Device Letters