PaperOn the Accuracy of Channel Length Characterization of LDD MOSFET'sJack Y.-C. Sun, Matthew R. Wordeman, et al.IEEE T-ED
Conference paperMonte-Carlo simulations of performance scaling in strained-Si nMOSFETsArvind Kumar, Massimo V. Fischetti, et al.SISPAD 2005
PaperEffect of nonequilibrium deep donors in heterostructure modelingArvind Kumar, Steven E. Laux, et al.Physical Review B
PaperAccuracy of an Effective Channel Length/External Resistance Extraction Algorithm for MOSFET'sSteven E. LauxIEEE T-ED
