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PaperOn the Accuracy of Channel Length Characterization of LDD MOSFET'sJack Y.-C. Sun, Matthew R. Wordeman, et al.IEEE T-ED
PaperA Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam LithographyMatthew R. Wordeman, April M. Schweighart, et al.IEEE T-ED
PaperA 220-mm2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architectureToshiaki Kirihata, Martin Gall, et al.IEEE Journal of Solid-State Circuits
