Identification of substitutional acceptors in bridgman-grown (cd, mn)te

Abstract

Intentionally doped Cd1-x MnxTe crystals with composition 0.1 < x < 0.3 were grown by the vertical Bridgman technique. Systematic studies were made of: (a) interaction of native defects with foreign impurities; (b) the mechanisms for substitutional doping of the acceptors Cu, Au, P and As; and (c) the binding energies of various defects. The measurements involve a combination of crystallographic, electrical and optical studies. The results demonstrated that P and As play the role of effective acceptors. In Cu and Au doped samples, a high compensation mechanism was observed. © 1987, SPIE.