IC process compatible nonvolatile magnetic RAM

Abstract

This paper presents the properties of a silicon IC process compatible, non-volatile memory cell with spin valve as storage element. The memory cell is made up of storage resistor stripe and the x/y select wires of typically 100nm thick. The current pulses in the select wires generate a vector sum of magnetic field that switches the cell state. The switching field in the longitudinal direction is lowered when a transverse field is applied. The memory cells were fabricated on thermal oxide on silicon wafers. The sputter deposition and etch process of the spin valve does not affect the leakage nor it alter the Vt of FETs, and thus may be integrated into the metallization steps of the silicon wafer processing. The cell exhibits fast R/W characteristics.