Publication
Journal of Non-Crystalline Solids
Paper

Hydrogenation and the density of defect states in amorphous silicon

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Abstract

We discuss the nature and density of defects in pure amorphous silicon, under the light of recent hydrogenation experiments. It is argued that a reliable measure of defect densities can be obtained by counting the number of hydrogen atoms that can be incorporated in a pure starting material by subsequent plasma treatment. This leads to interpretation of hopping conductivities in terms of a Fermi level density of states Nf in excess of 1020 cm-3 eV-1 and wave function spatial extent of the order of 2.5 Å. This figure is shown to be reasonable for a dangling bond wavefunction. © 1979.

Date

01 Jan 1979

Publication

Journal of Non-Crystalline Solids

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