John U. Knickerbocker, Paul S. Andry, et al.
IBM J. Res. Dev
Integration of the black matrix (BM) in active-matrix liquid-crystal displays (AMLCDs) into the TFT array is desirable to improve display performance. This requires a black-matrix material that is both an optical absorber and an electrical insulator. Amorphous silicon germanium (a-SiGe) is a candidate material for this application. When deposited by magnetron sputtering, a-SiGe can have both high optical density and high electrical resistivity. Compared to organic materials considered for black-matrix integration, a-SiGe offers higher optical density at a given film thickness, more-flexible processing, and better process compatibility with AMLCD fabrication.
John U. Knickerbocker, Paul S. Andry, et al.
IBM J. Res. Dev
Steven L. Wright, Robert W. Nywening, et al.
CIC 1998
Paul M. Solomon, Steven L. Wright, et al.
IEEE Electron Device Letters
Paul S. Andry, Cornelia K. Tsang, et al.
IBM J. Res. Dev