Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Hot electrons in heterolayers
Abstract
The theory of the dependence of electron temperature on Joule energy input, for degenerate carriers in a heterolayer, is outlined. Numerical results for GaAs electrons are computed and displayed. © 1984 The American Physical Society.
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