Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface

E. Cartier; D.J. DiMaria

doi:10.1016/0167-9317(93)90158-2

Microelectronic Engineering

Paper

01 Jan 1993

Hot-electron dynamics in SiO₂ and the degradation of the Si/SiO₂-interface

View publication

Abstract

Monte Carlo transport simulations are used to calculate the interface-state buildup at the Si/SiO2-interface during high-field current stress using a hot-electron-induced hydrogen-release model. © 1993.

Conference paper

Soft x-ray diffraction of striated muscle

S.F. Fan, W.B. Yun, et al.

Proceedings of SPIE 1989

Talk

Direct electrical access to the spin manifolds of individual lanthanide atoms

Gregory Czap, Kyungju Noh, et al.

APS Global Physics Summit 2025

Paper

Scanning tunneling microscopy of individual molecules: Beyond imaging

J.K. Gimzewski, T.A. Jung, et al.

Surface Science

Paper

Nanowires on stepped metal surfaces

F.J. Himpsel, T.A. Jung, et al.

Surface Review and Letters

View all publications

Abstract

Related

Soft x-ray diffraction of striated muscle

Direct electrical access to the spin manifolds of individual lanthanide atoms

Scanning tunneling microscopy of individual molecules: Beyond imaging

Nanowires on stepped metal surfaces