Publication
Applied Physics Letters
Paper

Hole conduction in Si3N4 films on Si

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Abstract

Dominant hole conduction is observed in thin Si3N4 films deposited on silicon with holes being injected from either aluminum or gold electrodes. Hole transport is confirmed by employing a shallow junction diode detector. Such a diode can serve also as excellent means for separating conduction currents from transient displacement currents under pulsed conditions.

Date

28 Aug 2008

Publication

Applied Physics Letters

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