Michiel Sprik
Journal of Physics Condensed Matter
A high surface concentration layer is essential for obtaining good ohmic contact on GaAs devices. Zn diffusion in GaAs using Zn3As2, ZnAs2, Zn3As2 + ZnAs2, and ZnAs2 + As as diffusion sources at low temperatures (600°-730'C) has been studied. The resulting surfaces were reproducible and undamaged, and the surface concentrations were in the 1020 cm-3 range. © 1976, The Electrochemical Society, Inc. All rights reserved.
Michiel Sprik
Journal of Physics Condensed Matter
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P.C. Pattnaik, D.M. Newns
Physical Review B