G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
High Surface Concentration Zn Diffusion in GaAs
Abstract
A high surface concentration layer is essential for obtaining good ohmic contact on GaAs devices. Zn diffusion in GaAs using Zn3As2, ZnAs2, Zn3As2 + ZnAs2, and ZnAs2 + As as diffusion sources at low temperatures (600°-730'C) has been studied. The resulting surfaces were reproducible and undamaged, and the surface concentrations were in the 1020 cm-3 range. © 1976, The Electrochemical Society, Inc. All rights reserved.
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