K.L. Saenger, K.E. Fogel, et al.
Applied Physics Letters
Heteroepitaxial thin-film features that are lattice matched to the underlying substrate undergo elastic relaxation at the free edges of the feature. To characterize the degree of elastic relaxation, we employed synchrotron-based x-ray diffraction techniques to map the change in lattice spacing in the thin film at a submicron resolution. Measurements were conducted on 0.24-μm thick, heteroepitaxially grown SiGe strips of various widths on Si (001). A comparison of the SiGe diffraction peak positions across the features provides a real-space mapping of the extent of elastic relaxation as a function of linewidth. The resultant in-plane normal film stress measurements were compared to calculated values from several elastic mechanical models to assess their validity in predicting stress distributions within the features. © 2005 American Institute of Physics.
K.L. Saenger, K.E. Fogel, et al.
Applied Physics Letters
Andrew Ying, Christian Witt, et al.
Journal of Applied Physics
Conal E. Murray, I.C. Noyan
Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
C.E. Murray, I.C. Noyan, et al.
Applied Physics Letters