High-power and high-linearity photodiodes

Abstract

Recent developments of modified uni-traveling carrier (MUTC) photodiodes capable of delivering high output RF power signals with low intermodulation distortions are reviewed. A flip-chip-bonded charge-compensated MUTC photodiode achieved a record-high output power of 0.75 W (28.8 dBm) at 15 GHz and a third order output intercept point (OIP3) up to 59 dBm. Power-combined and traveling wave photodiode arrays are promising candidates to further increase output power and linearity. © 2011 IEEE.