Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<3GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements. © 2011 IEEE.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
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APS Global Physics Summit 2025
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Rheologica Acta