Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<3GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements. © 2011 IEEE.
T.N. Morgan
Semiconductor Science and Technology
Ronald Troutman
Synthetic Metals
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020