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Publication
ECS Meeting 2005
Conference paper
High performance SOI device options
Abstract
This paper describes the silicon on insulator (SOI) technology and its expected evolution. We examine some novel possibilities, such as fully depleted SOI, double-gate FET, Fin FET and materials innovation for mobility enhancement beyond conventional partially depleted SOI. The technology challenges of these device elements with emphasis on the strength and weakness of individual device structure are discussed.