Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Two fully integrated chipsets covering the entire E-band frequency range, 71-76/81-86 GHz, have been demonstrated. These designs, which were implemented in 0.13-μm SiGe BiCMOS technology, use a sliding IF superheterodyne architecture. The receiver (Rx) chips include an image-reject low-noise amplifier, RF-to-IF mixer, variable gain IF amplifier (IF VGA), quadrature IF-to-baseband (BB) de-modulator, tunable BB filter, phase-locked loop (PLL) synthesizer, and a frequency quadrupler. At room temperature the Rx chips achieve a maximum gain of 73 dB, 6-dB noise figure, better than -12-dBm input third-order intercept point, more than 65-dB dynamic range, and consume 600 mW for lower band (LB) (71-76 GHz) and higher band (HB) (81-86 GHz) alike. The transmitter (Tx) chips include a power amplifier, image reject driver, variable RF attenuators, power detector, IF-to-RF up-converting mixer, IF VGA, quadrature BB-to-IF modulator, PLL, and a frequency multiplier. The Tx chips achieve a power 1-dB compression point (P1dB) of 17.5/16.6 dBm, saturated power (Psat) of 20.5/18.8 dBm on a single-ended output, up to 39-dB gain with an analog controlled dynamic range of 30 dB, and consumes 1.75/1.8 W for the LB and HB, respectively. This state-of-the-art performance enables the usage of complex modulations and high-capacity transmission.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Julien Autebert, Aditya Kashyap, et al.
Langmuir