High-mobility p-type transistor based on a spin-coated metal telluride semiconductor

Abstract

The deposition of p-type CuInTe2 as the telluride-based semiconductor, was investigated. Structurally, the CuInTe2 chalcopyrite can be integrated as a II-VI zinc-blende analog, with the Zn atoms of the archetypal ZnS structure. The structure is alternatively substituted by Cu and In atoms leading to a doubling of the basis cubic unit cell along the z-direction. A new stepwise process was devised for dissolution, which involved separate indium and copper based precursor solutions. A soluble In 2Te3 precursor, with approximate composition was prepared by stirring In2Te3 in hydrazine at room temperature and evaporating the resulting solution. Thermal decomposition of the nominally amorphous precursor began at near-ambient temperatures. Films of binary In 2Te3 can also be prepared by either drop-casting or spin-coating the In2Te3 precursor solution, using a low-temperature heat treatment.