G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Recent experimental results of InAs quantum wells clad with GaSb are described. It is shown that high quality GaSb is critical to the formation of the electron-hole system. The same results also apply to quantum wells with GaSb ternary alloys, where the densities of carrier can be controlled by varying the alloy composition. © 1989.