K.A. Chao
Physical Review B
Recent experimental results of InAs quantum wells clad with GaSb are described. It is shown that high quality GaSb is critical to the formation of the electron-hole system. The same results also apply to quantum wells with GaSb ternary alloys, where the densities of carrier can be controlled by varying the alloy composition. © 1989.
K.A. Chao
Physical Review B
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Langmuir
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SCML 2024
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