A. Reisman, M. Berkenblit, et al.
JES
Si02 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ^800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above =800 °C, further densification and structural relaxation occurred. Exposure to H20 also caused relaxation after annealing, as the most compressed Si-O-Si units reacted preferentially with moisture. © 1994, Materials Research Society. All rights reserved.
A. Reisman, M. Berkenblit, et al.
JES
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films