Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Si02 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ^800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above =800 °C, further densification and structural relaxation occurred. Exposure to H20 also caused relaxation after annealing, as the most compressed Si-O-Si units reacted preferentially with moisture. © 1994, Materials Research Society. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Mark W. Dowley
Solid State Communications
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997