A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Si02 films, formed by spin coating acid-catalyzed TEOS-based sol-gel on Si substrates, were annealed at 300–1000 °C and analyzed using ellipsometry, FTIR, and in situ stress measurements. Film porosity ranged from an average of 28% before annealing to 7% after annealing 3 h at 1000 °C. Below ^800 °C, water and silanol removal caused a decrease in refractive index and increase in the in-plane tensile stress. Infrared spectra indicated compressive strain normal to the plane, however. Above =800 °C, further densification and structural relaxation occurred. Exposure to H20 also caused relaxation after annealing, as the most compressed Si-O-Si units reacted preferentially with moisture. © 1994, Materials Research Society. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M. Hargrove, S.W. Crowder, et al.
IEDM 1998