Publication
JES
Paper

Growth of Large Single Crystals of Gallium Phosphide from a Stoichiometric Melt

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Abstract

A procedure is described for the growth of large single crystals of gallium phosphide. A vertical Bridgman apparatus is employed with a controlled phosphorus pressure source to maintain stoichiometric conditions during freezing. The high phosphorus pressure is contained by the use of heavy-walled quartz in the low temperature zone, and by permitting the thin-walled quartz in the hot zone to soften and expand out against a graphite support tube. Crystals doped with both zinc and tellurium have been prepared. The electrical properties of these and “undoped” crystals are presented. © 1968, The Electrochemical Society, Inc. All rights reserved.

Date

01 Jan 1968

Publication

JES

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