J.A. Van Vechten, W. Solberg, et al.
Journal of Crystal Growth
The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.
J.A. Van Vechten, W. Solberg, et al.
Journal of Crystal Growth
S.M. Rossnagel, H.R. Kaufman
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A.J. Kellock, J.E.E. Baglin, et al.
Nuclear Inst. and Methods in Physics Research, B
H. Kim, C. Detavenier, et al.
Journal of Applied Physics