S.M. Rossnagel
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The growth of TaN was studied by plasma-enhanced-atomic layer deposition (PE-ALD) technique using TaCl5 and hydrogen and nitrogen plasmas. Good quality cubic-TaN films with resistivity as low as 350 μω cm were obtained at a low temperature of 300 °C. It was found that the growth rate and resistivity of the films increased with increasing N concentration.
S.M. Rossnagel
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A.J. Kellock, J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
Michael A. Russak, S.M. Rossnagel, et al.
JES
A.J. Kellock, J.E.E. Baglin, et al.
MRS Spring Meeting 1994