Grating-Coupled Double-Heterostructure AlGaAs Diode Lasers
Abstract
Conugpted AlGaAs waveguide devices have been fabricated which emit low-divergence (~1° by 15°) laser beams nearly normal to the waveguide plane when pulsed electrically at room temperature. The devices are fabricated from material which is essentially the same as that used to fabricate CW room-temperature lasers, differing only in that the two top layers of AlGaAs and GaAs are very thin (~0.4 μm and 0.1 μm, respectively). Threshold current densities of 3000-4000 A/cm2 are typical in these devices even though ~20 percent of the resonator length is unpumped. The far-field pattern produced by the TE polarized leaky-wave laser beams emanating from the unpumped region is usually composed of two mode lines. A theory is outlined which describes how these mode lines are generated. The possibility of obtaining distributed-feedback (DFB) oscillation in devices of this type is also discussed. Copyright 1975 by The Institute of Electrical and Electronics Engineers, Inc.