Jianshi Tang, Damon B. Farmer, et al.
VLSI-TSA 2017
Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm 2 area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.
Jianshi Tang, Damon B. Farmer, et al.
VLSI-TSA 2017
Abram L. Falk, Kuan-Chang Chiu, et al.
Physical Review Letters
Kaship Sheikh, Shu Jen Han, et al.
IEEE TCAS-I
Osamu Nakatsuka, Kenji Hisada, et al.
Japanese Journal of Applied Physics