Conference paper
Dual work function metal gate CMOS using CVD metal electrodes
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
Multilayer films of [Co 10 Å/Cu(t)]64 with copper thicknesses from t=10 to 29 Å annealed for 1 h at temperatures about 350°C showed a decrease in sample resistivity at 4.2 K. The giant magnetoresistance (GMR) maximums for as-deposited films at t=10 Å and t=23 Å shifted with annealing. The GMR decreased for t=10 Å and t=23 Å but increased for t=19 Å and t=29 Å indicating a complex behavior with annealing. Similarities with granular films are discussed.
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
C. Lavoie, C. Detavernier, et al.
Microelectronic Engineering
J.M.E. Harper, C. Cabral Jr., et al.
MRS Spring Meeting 1999
T.R. McGuire, B.E. Argyle, et al.
Applied Physics Letters