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Journal of Applied Physics
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GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier

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Abstract

Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.

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Journal of Applied Physics

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