Dragana Popović, A.B. Fowler, et al.
Physical Review B
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
Dragana Popović, A.B. Fowler, et al.
Physical Review B
H. Ohno, L. Esaki, et al.
Applied Physics Letters
E. Mendez, L.L. Chang, et al.
Physical Review B
F.W. Saris, W.K. Chu, et al.
Applied Physics Letters