L.L. Chang
Solid-State Electronics
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
L.L. Chang
Solid-State Electronics
H. Ohno, E. Mendez, et al.
Physical Review Letters
H. Munekata, H. Ohno, et al.
Journal of Crystal Growth
Y. Guldner, J.P. Vieren, et al.
Physical Review Letters