Publication
IEEE T-ED
Paper

Generalized Scaling Theory and Its Application to a 1/4 micrometer MOSFET Design

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Abstract

In this paper we present a generalized scaling theory which allows for an independent scaling of the FET physical dimensions and applied voltages, while still maintaining constant the shape of tie electric-field pattern. Thus two-dimensional effects are kept under control even though the intensity of the field is allowed to increase. The resulting design flexibility allows the design of FET's with quarter-micrometer channel length to be made, for either room temperature or liquid-nitrogen temperature. The physical limitations of the scaling theory are then investigated in detail, leading to the conclusion that the limiting FET performances are not reached at the 0.25-/μm channel length. Further improvements are possible in the future, provided certain technology breakthroughs are achieved. © 1984 IEEE

Date

01 Jan 1984

Publication

IEEE T-ED

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