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Publication
IEEE MDTS 2024
Conference paper
Gate Resistance Test Structures Bounded by Local Layout Density to Characterize Metal Gate Height Variation in 7nm FinFET Technology
Abstract
Metal gate height (MGH) control is a critical mission in 7nm FinFET process. Gate lateral resistance, usually measured on a four-terminal test structure, is a convenient indicator of gate height. This abstract demonstrates the successful application of a set of gate resistance test structures with various local gate densities that discovered MGH variability systematics as a yield detractor in chip products, facilitated process improvement, and guided chip design optimization. They also exemplify effective process monitors that stay relevant to the context of product design.