Gas/surface reactions in the chemical vapor deposition of tungsten using WF6/SiH4mixtures

Abstract

We have studied the surface reactions of WF6/SiH4 mixtures on Si (100) that are relevant to the chemical vapor deposition of tungsten using x-ray photoemission and molecular-beam reactive scattering. The overall reaction is found to be 3SiH4 + 2WF6→2W + 3SiF4 + 6H2 with very little production of HF. The reaction proceeds by repeating the cycle of tungsten deposition by the reaction of WF6 with silicon, and the deposition of silicon by the reaction of SiH4 with the fluorinated tungsten surface. © 1989, American Vacuum Society. All rights reserved.