Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The equilibrium constants for the reaction of gaseous silicon monoxide with both oxygen and vapor separately have been computed from free energy data. The values obtained have been used to determine the ratio of partial pressures of silicon monoxide and silicon dioxide which exist in the gas phase in equilibrium with various partial pressures of the oxidizing gas. It is shown, by assuming that a gas phase interaction is predominant when solid silicon monoxide is evaporated in an oxygen or a water vapor atmosphere, that it is possible to predict the composition of the resulting film. There is reasonably good agreement between these predicted values and those found by experimental analysis. © 1962.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications