S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.
S. Guha, N.A. Bojarczuk, et al.
IEE/LEOS Summer Topical Meetings 1997
M. Copel, E. Cartier, et al.
Applied Physics Letters
R. Jammy, V. Narayanan, et al.
ISTC 2005
D.A. Buchanan, E. Gusev, et al.
IEDM 2000