S. Guha, E. Gusev, et al.
Applied Physics Letters
The authors have demonstrated the operation of GaN based light emitting diodes grown on Si(111) by molecular beam epitaxy. Electron injection is achieved through the n type Si substrate and electroluminescence peaks between 500-550 in the current injection range of 20-65 A/cm2 at 5-7.5 volts.
S. Guha, E. Gusev, et al.
Applied Physics Letters
D.A. Buchanan, E. Gusev, et al.
IEDM 2000
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
M. Copel, E. Cartier, et al.
Applied Physics Letters