Proceedings of SPIE - The International Society for Optical Engineering
Conference paper

Gallium nitride based LEDs on silicon substrates

Abstract

We describe the growth and characteristics of GaN based light emitting diodes grown on Si(111) substrates. We show that the UV electroluminescence of such diodes can be used to generate fluorescence in organic color converters so that multicolored hybrid nitride-organic light emitting diodes that emit in the visible can be prepared.

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