Fully scaled 0.5 μm MOS cicuits by synchroton X-ray lithography: Resist systems and line width control

Abstract

To test the line width control of typical resist systems in x-ray lithography, we have developed and utilized x-ray resist processes for all levels in the fabrication of NMOS and CMOS devices with 0.5 μm ground rules. Results from line width control studies will be discussed along with the process latitude from the resist systems. © 1989.