Conference paper
Substrate coupling noise issues in silicon technology
Keith A. Jenkins
SiRF 2004
The effect of electron-beam irradiation on the frequency response of modern bipolar transistors has been measured. The electron energies used are typical of those used in e-beam lithography. While the current gain of the transistors at dc is sharply reduced, the high-frequency response is virtually unchanged. This result demonstrates that the frequency response is limited by the base transit line. © 1989 IEEE
Keith A. Jenkins
SiRF 2004
Joachim N. Burghartz, Daniel C. Edelstein, et al.
IEEE T-MTT
Stas Polonsky, Keith A. Jenkins
IEEE Electron Device Letters
Yu-Ming Lin, Hsin-Ying Chiu, et al.
IEEE Electron Device Letters