Yu-Ming Lin, Damon B. Farmer, et al.
IEEE Electron Device Letters
The effect of electron-beam irradiation on the frequency response of modern bipolar transistors has been measured. The electron energies used are typical of those used in e-beam lithography. While the current gain of the transistors at dc is sharply reduced, the high-frequency response is virtually unchanged. This result demonstrates that the frequency response is limited by the base transit line. © 1989 IEEE
Yu-Ming Lin, Damon B. Farmer, et al.
IEEE Electron Device Letters
Keith A. Jenkins
IEEE SSC-L
Jonghae Kim, Jean-Olivier Plouchart, et al.
IMS 2003
Yu-Ming Lin, Keith A. Jenkins, et al.
IMS 2011