Publication
Journal of Applied Physics
Paper

Formation of PtSi in the presence of Al

View publication

Abstract

The formation of Pt silicides in the presence of Al is studied using Al/Pt/Si structures with different layer thicknesses of Al. Both the Pt-Si and Pt-Al reactions take place simultaneously, starting around 200 °C, with the formation of PtSi and PtAl2 completed at 400 °C. With an equal layer thickness for all three layers, the two alloys formed stay in contact with each other in a stable form up to about 500 °C. With a layer thickness of Al twice or more that of Pt and Si, the PtSi layer is completely converted to PtAl2 at 450 °C. The released Si from such a reaction is mostly located under the PtAl2 formed. The relation between these results and the unstable PtSi/Al contact in devices is discussed.

Date

01 Jan 1987

Publication

Journal of Applied Physics

Authors

Share