E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation of Si from the surface at high temperature, and the formation has been studied in both high-vacuum and 1 atm argon environments. In vacuum, a few monolayers of graphene forms at temperatures around 1400 °C, whereas in argon a temperature of about 1600 °C is required in order to obtain a single graphene monolayer. In both cases considerable step motion on the surface is observed, with the resulting formation of step bunches separated laterally by 10 μm. Between the step bunches, a layer-by-layer growth of the graphene is found. The presence of a disordered, secondary graphitic phase on the surface of the graphene is also identified. © 2010 American Vacuum Society.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
E. Burstein
Ferroelectrics
Michiel Sprik
Journal of Physics Condensed Matter