Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A LEED (low-energy electron diffraction) study of the reaction of very thin Ni films on Si{111} suggests the existence of a threshold coverage of Ni for the formation of NiSi2. If the initial Ni coverage is 6 monolayers or less, high-temperature anneals at 900-1200°C for times of a few seconds up to a few minutes produce a 1×1 structure. The LEED spectra from this structure are practically identical to those of the quenched "1×1" phase that can be obtained by quenching from high to room temperature the 1×1 phase of clean Si{111}. If the initial Ni coverage is higher than 6 monolayers then the above high-temperature anneals produce epitaxial NiSi2. The top layer of the NiSi2{111} film contains only Si atoms; the second layer contains only Ni atoms. The first interlayer spacing is contracted approximately 25% with respect to the bulk value. © 1983 The American Physical Society.
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989