Foreword special section on through silicon vias

Abstract

The 11 papers in this special section present a snapshot of recent progress in electrical modeling and design of through silicon vias (TSVs) by researchers from both academia and industry. The section is organized into three main areas. The first group of papers deals with the electromagnetic modeling of TSVs. The second group of papers is on the signal integrity and power integrity analysis of TSV interconnections. The third group of papers explores the system architectures and applications that might benefit from the TSV technology. © 2011-2012 IEEE.