Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
A. Reisman, M. Berkenblit, et al.
JES
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
M. Hargrove, S.W. Crowder, et al.
IEDM 1998