Floating-gate technique applied to two-dimensional systems

Abstract

We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As:GaAs heterostructures. © 1986 The American Physical Society.