Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
We report a new technique of using a floating-gate capacitive structure to measure the electrochemical potential difference between a reference conductor and the material in question as a function of some external parameter. It is illustrated by measurements on two two-dimensional systems: Si metal-oxide-semiconductor structures and (Ga,Al)As heterostructures. © 1986 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
John G. Long, Peter C. Searson, et al.
JES
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science