Revanth Kodoru, Atanu Saha, et al.
arXiv
The transfer of an adsorbed atom from one electrode to another in close proximity, with a potential difference between the electrodes, is analyzed theoretically. Calculations for the case of a Si atom are in accord with results on the transfer of Si atoms in the scanning tunneling microscope under ultrahigh-vacuum conditions at room temperature. Most of the activation-barrier lowering that permits a measurable transfer rate at this temperature is a chemical effect due to the proximity of the electrodes, but the bias provides an additional barrier lowering and a directional driving force. For conditions relevant to experiment, the atom acquires a distance-dependent charge no larger than several tenths of a unit charge (e). © 1992 The American Physical Society.
Revanth Kodoru, Atanu Saha, et al.
arXiv
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Michiel Sprik
Journal of Physics Condensed Matter
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010