Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Pronounced many-body exciton effects have been observed through photoluminescence in modulation-doped n-type GaAs quantum wells where a near-resonance coincidence exists between a transition involving two-dimensional electrons at the Fermi level in the first conduction subband and an exciton transition from the second conduction subband. Under these conditions, strong and distinct Fermi-edge singularities can be observed near k0. A magnetic field induces further enhancement of the effect but also leads to very large, B-1-periodic amplitude variations in the photoluminescence, with excursions over 3 orders of magnitude. © 1991 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta