Fast statistical circuit analysis with finite-point based transistor model

Abstract

A new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both I-V and C-V characteristics of a transistor, finite data points are identified by their physical meaning; the impact of process and design variations is embedded into these points as closed-form expressions. Then, the entire I-V and C-V are extrapolated using polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A at 65nm node. Compared to simulations with the BSIM model, the computation time can be reduced by 7x in transient analysis and 9x in Monte-Carlo simulations. © 2007 EDAA.