Fast graphene-based electronics and optoelectronics

Abstract

We discuss the use of monolayer graphene as the channel of RF field-effect transistors (GFETs) and as the photoconductive element of photodetectors. GFETs with cut-off frequencies up to 100 GHz and wide wavelength range, ultrafast photodetectors are demonstrated. The electric field-induced bandgap opening in bilayer graphene is also demonstrated. ©2010 IEEE.