K.A. Chao
Physical Review B
Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window. © 1990, The Electrochemical Society, Inc. All rights reserved.
K.A. Chao
Physical Review B
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Mark W. Dowley
Solid State Communications
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS