D.D. Koleske, S. Gates, et al.
The Journal of Chemical Physics
Chemical schemes for Si atomic layer epitaxy (ALE) are discussed using a two-step sequence of reactions: (1) surface chlorination, using a chlorosilane molecule, and (2) reduction (Cl removal), using atomic H or a silane molecule. The schemes are compared in terms of equilibrium thermodynamics, to select the most promising schemes. All of the proposed processes based on atomic H are spontaneous (thermodynamically downhill). Two reactions using Si2H6 are endothermic, but may be thermally driven at useful Si-growth temperatures, due to a large, positive entropy change for the reaction. © 1992 American Chemical Society.
D.D. Koleske, S. Gates, et al.
The Journal of Chemical Physics
D.D. Koleske, S. Gates, et al.
Surface Science
D.D. Koleske, S. Gates, et al.
Applied Physics Letters
C.M. Chiang, S. Gates, et al.
Journal of Physical Chemistry B