Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
A process has been developed to produce x-ray nanolithography masks containing fine linewidth patterns generated by scanning-electron-beam lithography. This technology allows researchers to combine the high resolution, arbitrary-pattern-generation capability of electron-beam lithography with the parallel replication, high contrast, and large process-latitude of x-ray nanolithography. A tri-level structure was used which consisted of PMMA as the electron-sensitive material, titanium as the middle, masking layer, and polymide as the buffer layer on top of a gold plating base. After electron-beam exposure and development, the pattern is transfered to the Ti layer by CCl2F2 RIE, and then a polyimide mold is produced by O2 RIE. Gold is then electroplated into this mold to form the x-ray absorber. X-ray masks with 100nm-period gratings and electronic device patterns of ≈ 100nm linewidths were fabricated by this process and replicated. © 1987.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Frank Stem
C R C Critical Reviews in Solid State Sciences
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001