Brian Souhan, Christine P. Chen, et al.
Photonics
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths including spectroscopy, chemical and biological sensing, free-space communications, and nonlinear optics. While optical-to-electronic signal conversion is essential to these applications, on-chip photodetection remains an important and challenging task. In this Letter, we present room temperature operation of Zn+-implanted Si waveguide photodiodes from 2.2 to 2.4 μm, with measured responsivities of up to 87 ± 29 mA∕W and low dark currents of <10 μA. Photocurrent generation is achieved by transitions from dopant-induced subbandgap trap states located ≈0.58 eV above the valence band to the conduction band, resulting in a peak detection wavelength of ≈2.3 μm. The wavelength of operation can be increased by choosing a dopant with an appropriate trap level, opening the possibility for onchip detection throughout the mid-infrared.
Brian Souhan, Christine P. Chen, et al.
Photonics
Brian Souhan, Christine P. Chen, et al.
Photonics
Jeffrey B. Driscoll, W. Astar, et al.
CLEO 2010
Richard R. Grote, Brian Souhan, et al.
CLEO 2014