Publication
ESSDERC 2010
Conference paper

Experimental evidence of unconventional room-temperature Quantum Hall effect (RTQHE) in 65nm Si nMOSFETs at very low magnetic fields

View publication

Abstract

For the first time we introduce experimental evidence of an anomalous or unconventional Room-Temperature QHE at B fields at and below 50 mT (milli-Teslas). The observed Ultra- High-Conductivity-State (UHCS), and negative channel current are explained in terms of a fractional-dimensional charge transmission, quasi-particle-phonon resonance, and marginal phase (semiconductor-insulator) transition. We believe this work is fundamental to understand the physics of low- and fractional-dimensional devices, which may open a wider and deeper road for Si-based devices applications. © 2010 IEEE.

Date

Publication

ESSDERC 2010

Authors

Topics

Share