Experimental evidence of unconventional room-temperature Quantum Hall effect (RTQHE) in 65nm Si nMOSFETs at very low magnetic fields

Abstract

For the first time we introduce experimental evidence of an anomalous or unconventional Room-Temperature QHE at B fields at and below 50 mT (milli-Teslas). The observed Ultra- High-Conductivity-State (UHCS), and negative channel current are explained in terms of a fractional-dimensional charge transmission, quasi-particle-phonon resonance, and marginal phase (semiconductor-insulator) transition. We believe this work is fundamental to understand the physics of low- and fractional-dimensional devices, which may open a wider and deeper road for Si-based devices applications. © 2010 IEEE.